• Single-phase 220VAC +/- 10%, 50 / 60 Hz
• 1000 W (including a vacuum pump and water chiller)
• If the voltage is 110 V, a 1500 W transformer can be ordered at MTI (Click the picture to the left for detail)

• 13.5 MHz, 100 W RF generator with manual matching is included and connected to the sputtering heads
• Continuous working time:
• 100W: ≤ 1 hour
• 80W: ≤ 1.5 hours
• 70W: ≤ 2 hours
• 60W: ≤ 4 hours
• 50W: ≤ 8 hours
• Load range: 0 – 80 adjustable. Tuning range: -200j – 200j adjustable
• The rotatable switch can activate one sputtering head at a time. Sputtering heads can be switched “in the plasma” (no breaking of vacuum and plasma during a multilayer process)
• With a DC power supply, the coater can be easily modified into 1” DC sputtering sources for metallic film deposition, enabling three DC, one RF / two DC, and two RF / one DC sputtering head configurations (Bottom left picture. Please select from the Product Options)
• Optional 300 W auto-match RF generator is available at extra cost (Click the bottom right picture for detail )

Magnetron Sputtering Head

• Three 1" magnetron sputtering heads with water cooling jackets (Click Pic #1 for detail information) are included and inserted into quartz chamber via quick clamps
• RF cable replacement can be purchased at MTI (Click Pic #2 for detail information)
• One manually operated shutter is built on the flange (See Pic #3)
• 10 L/min recirculating water chiller is included for cooling sputtering heads (Click Pic #4 for detail )

Sputtering Target

• Target size requirement: 1" diameter x 1/8" thickness max
• Sputtering distance range: 50 – 80 mm adjustable
• Sputtering angle range: 0 – 25° adjustable 
• 1" diameter Cu target and Al2O3 target are included for demo testing
• Various oxide 1” sputtering targets are available upon request at extra cost
• For target bonding, 1 mm and 2 mm copper backing plates are included. Silver epoxy (Pic #1) and extra copper backing plates (Pic #2) can be ordered at MTI
  

• Vacuum chamber: 256 mm OD x 238 mm ID x 276 mm Height, made of high purity quartz
• Sealing flange: 274 mm Dia. made of Aluminum with high-temperature silicone O-ring
• Stainless steel shield cage is included for 100% shielding of RF radiation from the chamber
• Max vacuum level: 1.0E-5 Torr with optional turbopump and chamber baking 

Sample Holder

• The sample holder is a rotatable and heatable stage made of the ceramic heater with stainless steel cover
• Sample holder size: 50 mm Dia. for. 2" wafer max (See picture below)
• Rotation speed: 1 - 10 rpm adjustable for uniform coating
• The holder temperature is adjustable from RT to 600 °C max (5 min max at 600 °C; 2 hr max at 500 °C) with accuracy +/- 1.0 °C via a digital temperature controller

• KF40 vacuum port is built-in for connecting to a vacuum pump.
• Vacuum level: 1.0E-2 Torr with included dual-stage mechanical pump (Click the picture on the left)
• 1.0E-5 Torr with optional turbopump (Click the picture 1-2)
• Vacuum level: 1.0E-2 Torr with dual-stage mechanical pump and 1.0E-5 Torr with the turbopump
• The 1 PPm ga purification system may be used to replace turbopump to get a more clean chamber (Pic.3)

• Precision quartz thickness sensor is optional. It can be built into the chamber to monitor coating thickness with an accuracy of 0.1 Å (water cooling required) 
• Easy USB connection to PC for remote thickness and coating speed monitoring
• 5 pcs quartz sensors (consumable) are included 
• Remote PC control of the temperature controller is optional 
• Easy USB connection to PC for remote temperature control
• Temperature control software is included. The module is compatible with LabView
• For DC magnetron sputtering, turbopump is recommended 
• Reactive sputtering with N2 or O2 is available with optional gas mixing control station
• The coater can be modified into a powder coating 

Compliance

• CE approval
• NRTL or CSA is NOT available temporarily.

Application Notes

• This compact 1" RF magnetron sputtering coater is designed for coating oxide thin films on oxide single crystal substrates, which usually does not need high vacuum set-up
• A two-stage pressure regulator (not included) should be installed on the gas cylinder to limit the output pressure of the gas to below 0.02 MPa for safe usage. Please use > 5N purity Ar gas for plasma sputtering
• For the best film-substrate adhesion strength, please clean the substrate surface before coating:
• Ultrasonic cleaning with the following sequential baths - (1) acetone, (2) isopropyl alcohol - to remove oil and grease. Blow-dry the substrate with N2, then hot bake in vacuum to remove absorbed moisture
• Plasma cleaning may be needed for surface roughening, surface chemical bonds activation, or additional contamination removal

• For best performance, the non-conductive targets must be installed with a copper backing plate. Please refer to the instruction video below (#3) for target bonding
• MTI supplies single crystal substrate from A to Z 
• MTI RF Plasma Sputtering Coaters have successfully coated ZnO on Al2O3 substrate at 500 °C 
• HIGH VOLTAGE! Sputtering heads connect to high voltage. For safety, the operator must shut down the RF generator before sample loading and target changing operations