High Vacuum Multi-Target Magnetron Sputtering System – Precision Thin Film Deposition for Nanotechnology & Industrial

Model: Lith-TK-JS02-Precision Thin Film Deposition for Nanotechnology

I. System Overview

Features & Applications
The Lith-TK-JS02 is a high-vacuum multi-target magnetron sputtering coating system, integrating advanced components such as:

· Sputtering chamber

· Magnetron sputtering targets

· DC/pulse sputtering power supply

· Auto-matching RF power supply

· Pulse bias power supply

· Sample heating system

· Vacuum & gas delivery systems

· PLC + touchscreen semi-automatic control system

With a compact, host-control integrated design, the system offers user-friendly operation and space efficiency. It is widely adopted in:

· Universities & research institutes for academic and R&D experiments.

· Industrial enterprises for exploratory trials and new product development.

Key Applications:

1. Nanoscale single-layer, multilayer, and composite films.

2. Deposition of diverse films:

o Metallic/Alloy (Ag, Al, Cu, NiCr, etc.)

o Semiconductor/Ceramic/Dielectric (TiO₂, TiN, CrN, ITO, SiO₂, etc.).

3. Flexible deposition modes: Single-target, sequential, or co-sputtering with three targets.

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II. Technical Specifications

Parameter	Specification
Vacuum Chamber	Ø500×H420 mm, 304 stainless steel, front-opening design.
Vacuum System	Hybrid molecular pump + rotary vane pump + high-vacuum valve; digital vacuum gauge.
Ultimate Vacuum	≤6.0×10⁻⁵ Pa (after 24-hour pumping, no load).
Leak Rate	≤0.8 Pa/h (pressure rise rate); ≤10 Pa after 12 hours without pumping.
Pumping Speed	≤15 min (ambient to 5.0×10⁻³ Pa, no load).
Substrate Stage	Ø150 mm, compatible with various substrate sizes.
Rotation & Heating	0–20 rpm rotation; heating range: RT–500±1°C (Shimaden PID closed-loop control).
Sputtering Targets	3× 3-inch permanent magnet co-focal targets (adjustable angle/height); RF/MF/DC compatible (supports magnetic materials); pneumatic shutter.
Deposition Modes	Independent/sequential/co-sputtering (bottom-up configuration).
Pulse Bias Power	-1000 V, 1 set.
Film Uniformity	≤±5% (within Ø100 mm area).
Control System	PLC + touchscreen HMI (semi-automatic).
Safety Protections	Alarms and safeguards for water shortage, overcurrent/voltage, circuit faults; logic interlock system.
Dimensions (Main Unit)	1900(L)×800(W)×1900(H) mm.

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III. Competitive Advantages

1. Versatility – Supports diverse materials (metals, ceramics, semiconductors) and complex film structures.

2. Precision Control – PID temperature regulation (±1°C) and high film uniformity (±5%).

3. User-Oriented Design – Compact footprint, intuitive interface, and robust safety features.

4. Research-Grade Performance – High vacuum (10⁻⁵ Pa) and flexible sputtering modes ideal for R&D and pilot production.